Silicon Carbide/Polysilazane Composite: Effect of Temperature on the Densification, Phase, and Microstructure Evolution

This paper reports a route to suppress the grain growth in silicon carbide (SiC) during its sintering by combining it with polysilazane (PSZ). SiC was mixed PSZ 1:1 weight ratio and sintered at 1600, 1700, 1800 °C hot-pressing furnace. A satisfactory density obtained temperatures > 1600 °C. The sizes of SiC/PSZ composites 1700 were 112 125 nm, respectively. shape composite circular mainly similar initial powder. Grain accommodation observed temperature It is suggested that different sample shapes affected liquid phase formations. Silicon oxynitride (Si2N2O) formed played an important role densification microstructure generation.